Our research focuses on the atomic layer deposition of advanced metal and topological semimetal thin films for next-generation semiconductor interconnect applications. We develop thermal ALD, plasma-enhanced ALD, and hot-wire-assisted ALD processes to achieve precise control over film composition, thickness, and electrical properties.

Our primary materials include tantalum phosphide (TaP), niobium phosphide (NbP), and ternary tantalum–niobium phosphide (TaNbP). We also investigate metal nitride thin films, including TaN, TiN for advanced interconnect and electrode applications.