90 "Role of a cyclopentadienyl ligand in Hf precursors using H2O or O3 as oxidant in atomic layer deposition" Youngmin Song, Hui-Jin Kim, Soo Hyun Lee, Sujin Kwon, Bonggeun Shong and Il-Kwon Oh* [Journal of Vacuum Science & Technology A] https://doi.org/10.1116/6.0004358
89 "Surface conduction and reduced electrical resistivity in ultrathin noncrystalline NbP semimetal" Asir Intisar Khan , Akash Ramdas, Emily Lindgren, Hyun-Mi Kim, Byoungjun Won, Xiangjin Wu, Krishna Saraswat, Ching-Tzu Chen, Yuri Suzuki, Felipe H. da Jornada, Il-Kwon Oh* and Eric Pop* [Science] https://www.science.org/doi/10.1126/science.adq7096
2024
88 "Optimizing De-trap Pulses in Gate-injection Type Ferroelectric NAND Cells to Minimize Read After Write Delay Issue" Giuk Kim, Hyojun Choi, Hongrae Cho, Sangho Lee, Hunbeom Shin, Hyunjun Kang, Hoon Kim, Seokjoong Shin, Seonjae Park, Sunseong Kwon, Youngjin Lim, Kang Kim, Jong Min Chung, Il-Kwon Oh, Sang-Hee Ko Park, Jinho Ahn and Sanghun Jeon [IEEE Transactions on Electron Devices] https://doi.org/10.1109/LED.2024.3482099
87 "Effect of passivation layers in bilayer with ZrO2 on Ge substrate for improved thermal stability" Byoungjun Won, Geun-Ha Oh and Il-Kwon Oh, [Journal of Materials Science] https://doi.org/10.1007/s10853-024-10309-z
86 "Kinetically Stabilized Hafnia Ferroelectric of Al-Doped HfO2 Film by Fast Ramping and Fast Cooling Process" Lingwei Zhang, Giuk Kim, Sangho Lee, Hunbeom Shin, Youngjin Lim, Kang Kim, Il-Kwon Oh, Sang-Hee Ko Park, Jinho Ahn and Sanghun Jeon [IEEE Transactions on Electron Devices] https://doi.org/10.1109/TED.2024.3475308
85 "Positive interaction between charge trapping and polarization switching in metal-interlayer-ferroelectric-interlayer-silicon (MIFIS) ferroelectric field-effect transistor."Choi, H., Kim, G., Lee, S., Shin, H., Lim, Y., Kim, K., Kim, D.-H., Oh, I.-K., Park, S.-H. K., Ahn, J., & Jeon, S., IEEE Electron Device Letters, (2024), https://doi.org/10.1109/led.2024.3466211
84 "Experimental Analysis on the Interaction Between Interface Trap Charges and Polarization on the Memory Window of Metal-Ferroelectric-Insulator-Si (MFIS) FeFET." Giuk Kim, Hyojun Choi, Sangho Lee, Hunbeom Shin, Sangmok Lee, Yunseok Nam, Hyunjun Kang, Seokjoong Shin, Hoon Kim, Youngjin Lim, Kang Kim, Il-Kwon Oh, Sang-Hee Ko Park, Jinho Ahn, Sanghun Jeon, IEEE Transactions on Electron Devices ,(2024),http;//doi.org/10.1109/TED.2024.3442163
83 "First Demonstration of Thermally Stable Zr:HfO2 Ferroelectrics via Inserting AlN Interlayer," Sangmok Lee, Giuk Kim, Sangho Lee; Hunbeom Shin, Youngjin Lim, Kang Kim , IEEE Electron Device Letters, vol. 45, no. 9, pp. 1578-1581(2024), https://doi.org/10.1109/LED.2024.3424973
82 "Si precursor inhibitors for area selective deposition of Ru" Bonwook Gu, Sumaria Yasmeen, Geun-Ha Oh, Il-Kwon Oh, Youngho Kang, Han-Bo-Ram Lee*, Applied Surface Science, 669 (2024) 160530, https://doi.org/10.1016/j.apsusc.2024.160530
81 "Review of Material Properties of Oxide Semiconductor Thin Films Grown by Atomic Layer Deposition for Next-Generation 3D Dynamic Random-Access Memory Devices" Ae Rim Choi, Dong Hyun Lim, So-Yeon Shin, Hye Joo Kang, Dohee Kim, Ja-Yong Kim, Youngbae Ahn, Seung Wook Ryu, and Il-Kwon Oh*, Chem. Mater., 36 (5) (2024) 2194-2219 https://doi.org/10.1021/acs.chemmater.3c02223
80 "Role of a cyclopentadienyl ligand in a heteroleptic alkoxide precursor in atomic layer deposition" Hwi Yoon, Yujin Lee, Ga Yeon Lee, Seunggi Seo, Bo Keun Park, Taek-Mo Chung*, Il-Kwon Oh*, Hyungjun Kim*, The Journal of Chemical Physics , 160, 024302 (2024), https://doi.org/10.1063/5.0182690
2023
79 "Role of a surface hydroxyl group depending on growth temperature in atomic layer deposition of ternary oxides" Sanghun Lee, Seunggi Seo, Woo-Jae Lee, Wontae Noh, Se-Hun Kwon, Il-Kwon Oh*, Hyungjun Kim*, Journal of Vacuum Science & Technology A, 41 (2023) 062402, https://doi.org/10.1116/6.0002880
78 "Understanding Growth Mechanism of Atomic Layer Deposition of Tisiox for Spacer in Double Patterning Process" Sanghun Lee, Seunggi Seo, Wonate Noh, Il-Kwon Oh, Hyungjun Kim*, 244th ECS Meeting (2023)
77 "Area-Selective Atomic Layer Deposition for Resistive Random-Access Memory Devices," Il-Kwon Oh*, Asir Intisar Khan, Shengjun Qin, Yujin Lee, H.-S. Philip Wong, Eric Pop, and Stacey F. Bent*, ACS Appl. Mater. Interfaces 2023, 15, 36, 43087–43093. https://doi.org/10.1021/acsami.3c05822
76 "Reaction mechanism and film properties of the atomic layer deposition of ZrO2 thin films with a heteroleptic CpZr(N(CH3)2)3 precursor," Ae Rim Choi, Seunggi Seo, Seiyon Kim, Dohee Kim, Seung-Wook Ryu, Woo-Jae Lee*, Il-Kwon Oh*, Applied Surface Science, 624 (2023) 157104, https://doi.org/10.1016/j.apsusc.2023.157104
75 "Dysprosium Incorporation for Phase Stabilization of Atomic-Layer-Deposited HfO2 Thin Films," Yujin Lee, Kangsik Kim, Zonghoon Lee, Hong-Sub Lee, Han-Bo-Ram Lee, Woo-Hee Kim*, Il-Kwon Oh*, and Hyungjun Kim*, Chem. Mater., 35 (6) (2023) 2312–2320, https://doi.org/10.1021/acs.chemmater.2c02862
2022
74 "Unveiling the Effect of Superlattice Interfaces and Intermixing on Phase Change Memory Performance," Asir Intisar Khan, Xiangjin Wu, Christopher Perez, Byoungjun Won, Kangsik Kim, Pranav Ramesh, Heungdong Kwon, Maryann C. Tung, Zonghoon Lee, Il-Kwon Oh, Krishna Saraswat, Mehdi Asheghi, Kenneth E. Goodson, H.-S. Philip Wong, and Eric Pop*, Nano Lett., 22 (15) (2022) 6285–6291, https://doi.org/10.1021/acs.nanolett.2c01869
73 "First Demonstration of Ge2Sb2Te5-Based Superlattice Phase Change Memory with Low Reset Current Density (~3 MA/cm2) and Low Resistance Drift (~0.002 at 105°C)," Asir Intisar Khan, Christopher Perez, Xiangjin Wu, Byoungjun Won, Kangsik Kim, Heungdong Kwon, Pranav Ramesh, Kathryn M Neilson, Mehdi Asheghi, Krishna Saraswat, Zonghoon Lee, Il-Kwon Oh, H-S Philip Wong, Kenneth E Goodson, Eric Pop, 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)., (2022), https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830348
72 "Elucidating the Reaction Mechanism of Atomic Layer Deposition of Al2O3 with a Series of Al(CH3)xCl3–x and Al(CyH2y+1)3 Precursors," Il-Kwon Oh, Tania E. Sandoval, Tzu-Ling Liu, Nathaniel E. Richey, Chi Thang Nguyen, Bonwook Gu, Han-Bo-Ram Lee, Ralf Tonner-Zech, and Stacey F. Bent*, J. Am. Chem. Soc., 144 (26) (2022) 11757-11766, https://doi.org/10.1021/jacs.2c03752.
71 "Tuning Molecular Inhibitors and Aluminum Precursors for the Area-Selective Atomic Layer Deposition of Al2O3," Josiah Yarbrough, Fabian Pieck, Daniel Grigjanis, Il-Kwon Oh, Patrick Maue, Ralf Tonner-Zech, and Stacey F. Bent*, Chem. Mater., 34 (2022) 4646–4659, https://doi.org/10.1021/acs.chemmater.2c00513.
2021
70 “Growth mechanism and electrical properties of tungsten films deposited by plasma-enhanced atomic layer deposition with chloride and metal organic precursors,” Yujin Lee, Seunggi Seo, Taewook Nam, Hyunho Lee, Hwi Yoon, Sangkyu Sun, Il-Kwon Oh, Sanghun Lee, Bonggeun Shong, Jin Hyung Seo, Jang Hyeon Seok, Hyungjun Kim, Applied Surface Science., 568 (2021) 150939, https://doi.org/10.1016/j.apsusc.2021.150939.
69 “Atomic Layer Deposition of Titanium Silicate for Multi-Patterning Process,” Sanghun Lee, Seunggi Seo, Wontae Noh, Il-Kwon Oh, Hyungjun Kim, 2021 IEEE International Interconnect Technology Conference (IITC)., (2021) 1-3, 10.1109/IITC51362.2021.9537517.
68 “Role of Precursor Choice on Area-Selective Atomic Layer Deposition,” Il-Kwon Oh, Tania E Sandoval, Tzu-Ling Liu, Nathaniel E Richey, Stacey F Bent, Chemistry of Materials., 33 (11) (2021) 3926-3935, https://doi.org/10.1021/acs.chemmater.0c04718.
67 “Self-Formation of Superhydrophobic Surfaces through Interfacial Energy Engineering between Liquids and Particles,” Sumaira Yasmeen, Jaehong Yoon, Chan Hui Moon, Rizwan Khan, Houda Gaiji, Sangwoo Shin, Il-Kwon Oh, Han-Bo-Ram Lee, Langmuir., 37 (17) (2021) 5356-5363, https://doi.org/10.1021/acs.langmuir.1c00481.
66 “Hydrogen Barriers Based on Chemical Trapping Using Chemically Modulated Al2O3 Grown by Atomic Layer Deposition for InGaZnO Thin-Film Transistors,” Yujin Lee, Taewook Nam, Seunggi Seo, Hwi Yoon, Il-Kwon Oh, Chong Hwon Lee, Hyukjoon Yoo, Hyun Jae Kim, Wonjun Choi, Seongil Im, Joon Young Yang, Dong Wook Choi, Choongkeun Yoo, Ho-jin Kim, Hyungjun Kim, ACS Applied Materials & Interfaces., 13 (17) (2021) 20349-20360, https://doi.org/10.1021/acsami.1c02597.
65 “MoS2 doping by atomic layer deposition of high-k dielectrics using alcohol as process oxidants,” Whang Je Woo, Seunggi Seo, Taewook Nam, Youngjun Kim, Donghyun Kim, Jeong-Gyu Song, Il-Kwon Oh, Jun Hyung Lim, Hyung-Jun Kim, Hyungjun Kim, Applied Surface Science., 541 (2021) 148504, https://doi.org/10.1016/j.apsusc.2020.148504.
64 “Area-Selective Molecular Layer Deposition of a Silicon Oxycarbide Low-k Dielectric,” Xiaoyun Yu, Dara Bobb-Semple, Il-Kwon Oh, Tzu-Ling Liu, Richard G Closser, William Trevillyan, Stacey F Bent, Chemistry of Materials., 33 (3) (2021) 902-909, https://doi.org/10.1021/acs.chemmater.0c03668.
63 “Reaction Mechanisms of Non-hydrolytic Atomic Layer Deposition of Al2O3 with a Series of Alcohol Oxidants,” Seunggi Seo, Whang Je Woo, Yujin Lee, Hwi Yoon, Miso Kim, Il-Kwon Oh, Seung-Min Chung, Hyungjun Kim, Bonggeun Shong, Journal of physical chemistry., 125 (33) (2021) 18151-18160, https://doi.org/10.1021/acs.jpcc.1c03518.
62 “Hydrogen Barriers Based on Chemical Trapping Using Chemically Modulated Al2O3 Grown by Atomic Layer Deposition for InGaZnO Thin-Film Transistors,” Yujin Lee, Taewook Nam, Seunggi Seo, Hwi Yoon, Il-Kwon Oh, Chong Hwon Lee, Hyukjoon Yoo, Hyun Jae Kim, Wonjun Choi, Seongil Im, Joon Young Yang, Dong Wook Choi, Choongkeun Yoo, Ho-jin Kim, Hyungjun Kim, ACS Appl. Mater. Interface., 13 (17) (2021) 20349–20360, https://doi.org/10.1021/acsami.1c02597.
61 “Controllable size and crystallinity of Ru nanoparticles on a carbon support synthesized by fluidized bed reactor-atomic layer deposition for enhanced hydrogen oxidation activity,” Woo-Jae Lee, Susanta Bera, Hyun-Jae Woo, Jung-Won An, Jong-Seong Bae, Il-Kwon Oh, Se-Hun Kwon, Journal of Materials Chemistry A., 9 (32) (2021) 17223-17230, 10.1039/D1TA03678E.
2020
60. “Modified atomic layer deposition of MoS2 thin films,” Li Zeng, Nathaniel E Richey, David W Palm, Il-Kwon Oh, Jingwei Shi, Callisto Maclsaac, Thomas Jaramillo, Stacey F Bent, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films., 38 (6) (2020) 060403, https://doi.org/10.1116/6.0000641.
59. “The Precursor Adsorption Mechanism, Growth Characteristics and Electrical Properties of Plasma-Enhanced Atomic Layer Deposited Tungsten Films by Using Tungsten Chloride Precursors,” Seunggi Seo, Yujin Lee, Il-Kwon Oh, Bonggeun Shong, Hwi Yoon, Sanghun Lee, Hyungjun Kim, 2020 IEEE International Interconnect Technology Conference (IITC)., (2020) 103-105, 10.1109/IITC47697.2020.9515589.
58. “Comparative Study of the Growth Characteristics and Electrical Properties of Atomic-layer-deposited W Films Obtained from Newly Synthesized Metalorganic and Halide Precursor,” Yujin Lee, Seunggi Seo, Taewook Nam, Hyunho Lee, Hwi Yoon, Sanghun Lee, Il-kwon Oh, Hyungjun Kim, 2020 IEEE International Interconnect Technology Conference (IITC)., (2020) 97-99, https://doi.org/10.1109/IITC47697.2020.9515671.
57. “Improved interface quality of atomic-layer-deposited ZrO2 metal-insulator-metal capacitors with Ru bottom electrodes,” Jae Hwan Lee, Bo-Eun Park, David Thompson, Myeonggi Choe, Zonghoon Lee, Il-Kwon Oh, Woo-Hee Kim, Hyungjun Kim, Thin Solid Films., 701 (2020) 137950, https://doi.org/10.1016/j.tsf.2020.137950.
56. “Synthesis of a Hybrid Nanostructure of ZnO-Decorated MoS2 by Atomic Layer Deposition,” Il-Kwon Oh, Woo-Hee Kim, Li Zeng, Joseph Singh, Dowon Bae, Adriaan JM Mackus, Jeong-Gyu Song, Seunggi Seo, Bonggeun Shong, Hyungjun Kim, Stacey F Bent, ACS nano., 14 (2) (2020) 1757-1769, https://doi.org/10.1021/acsnano.9b07467.
55. “Surface Energy Change of Atomic-Scale Metal Oxide Thin Films by Phase Transformation,” Il-Kwon Oh, Li Zeng, Jae-Eun Kim, Jong-Seo Park, Kangsik Kim, Hyunsoo Lee, Seunggi Seo, Mohammad Rizwan Khan, Sangmo Kim, Chung Wung Park, Junghoon Lee, Bonggeun Shong, Zonghoon Lee, Stacey F Bent, Hyungjun Kim, Jeong Young Park, Han-Bo-Ram Lee, ACS nan., 14 (1) (2020) 676-687, https://doi.org/10.1021/acsnano.9b07430.
2019
54. “Reaction mechanism of Pt atomic layer deposition on various textile surfaces,” Il-Kwon Oh, Jong Seo Park, Mohammad Rizwan Khan, Kangsik Kim, Zonghoon Lee, Bonggeun Shong, Han-Bo-Ram Lee, Chemistry of Materials., 31 (21) (2019) 8995-9002, https://doi.org/10.1021/acs.chemmater.9b03171.
53. “Effects of O2 plasma treatment on moisture barrier properties of SiO2 grown by plasma-enhanced atomic layer deposition,” Yujin Lee, Seunggi Seo, Il-Kwon Oh, Sanghun Lee, Hyungjun Kim, Ceramics International., 45 (14) (2019) 17662-17668, https://doi.org/10.1016/j.ceramint.2019.05.332.
52. “Atomic Layer Deposition of Al2O3 with Alcohol Oxidants for Impeding Substrate Oxidation,” Seunggi Seo, Whang Je Woo, Il-kwon Oh, Hyungjun Kim, Bonggeun Shong, ECS Meeting Abstracts. 24 (2019) 1152.
51. “Hydrogen barrier performance of sputtered La2O3 films for InGaZnO thin-film transistor,” Yujin Lee, Chong Hwon Lee, Taewook Nam, Sanghun Lee, Il-Kwon Oh, Joon Young Yang, Dong Wook Choi, Choongkeun Yoo, Ho-jin Kim, Woo-Hee Kim, Hyungjun Kim, Journal of Materials Science. 54 (16) (2019) 11145-11156.
50. “Atomic Layer Deposition of Pt Thin Films Using Dimethyl (N,N-Dimethyl-3-Butene-1-Amine-N) Platinum and O2 Reactant,” Woo-Jae Lee, Zhixin Wan, Chang-Min Kim, Il-Kwon Oh, Ryosuke Harada, Kazuharu Suzuki, Eun-Ae Choi, Se-Hun Kwon, Chemistry of Materials. 31 (14) (2019) 056-5064, https://doi.org/10.1021/acs.chemmater.9b00675.
49. “Analysis of defect recovery in reduced graphene oxide and its application as a heater for self-healing polymers,” Hyun Gu Kim, Il-Kwon Oh, Seungmin Lee, Sera Jeon, Hyunyong Choi, Kwanpyo Kim, Joo Ho Yang, Jae Woo Chung, Jaekwang Lee, Woo-Hee Kim, Han-Bo-Ram Lee, ACS applied materials & interfaces. 11 (18) (2019) 16804-16814, https://doi.org/10.1021/acsami.8b19955.
2018
48. “Bi-layer high-k dielectrics of Al2O3/ZrO2 to reduce damage to MoS2 channel layers during atomic layer deposition,” Whang Je Woo, Il-Kwon Oh, Bo-Eun Park, Youngjun Kim, Jongseo Park, Seunggi Seo, Jeong-Gyu Song, Hanearl Jung, Donghyun Kim, Jun Hyung Lim, Sunhee Lee, Hyungjun Kim, 2D Materials., 6 (1) (2018) 015019, https://doi.org/10.1088/2053-1583/aaef1e.
47. “Structural and electrical properties of Ge-doped ZrO2 thin films grown by atomic layer deposition for high-k dielectrics,” Bo-Eun Park, Yujin Lee, Il-Kwon Oh, Wontae Noh, Satoko Gatineau, Hyungjun Kim, Journal of Materials Science. 53 (21) (2018) 15237-15245, https://doi.org/10.1007/s10853-018-2695-4.
46. “Effects of Ar Addition to O2 Plasma on Plasma-Enhanced Atomic Layer Deposition of Oxide Thin Films,” Hanearl Jung, Il-Kwon Oh, Chang Mo Yoon, Bo-Eun Park, Sanghun Lee, Ohyung Kwon, Woo Jae Lee, Se-Hun Kwon, Woo-Hee Kim, Hyungjun Kim, ACS applied materials & interfaces. 10 (46) (2018) 40286-40293, https://doi.org/10.1021/acsami.8b14244.
45. “Area-selective atomic layer deposition using Si precursors as inhibitors,” Rizwan Khan, Bonggeun Shong, Byeong Guk Ko, Jae Kwang Lee, Hyunsoo Lee, Jeong Young Park, Il-Kwon Oh, Shimeles Shumi Raya, Hyun Min Hong, Kwun-Bum Chung, Erik J Luber, Yoon-Seok Kim, Chul-Ho Lee, Woo-Hee Kim, Han-Bo-Ram Lee, Chemistry of Materials. 30 (21) (2018) 7603-7610, https://doi.org/10.1021/acs.chemmater.8b02774.
44. “Amorphous TiO2/p-Si Heterojunction Photodiode Prepared by Low-Temperature Atomic Layer Deposition,” Jaehong Yoon, Rizwan Khan, Il-Kwon Oh, Hyungjun Kim, Han-Bo-Ram Lee, Nanoscience and Nanotechnology Letters. 10 (5-6) (2018) 800-804, https://doi.org/10.1166/nnl.2018.2638.
43. “High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation,” Whang Je Woo, Taewook Nam, Il-Kwon Oh, Wanjoo Maeng, Hyungjun Kim, Metals and Materials International, 24 (3) (2018) 652-656, https://doi.org/10.1007/s12540-018-0045-3.
42. “Water-Erasable Memory Device for Security Applications Prepared by the Atomic Layer Deposition of GeO2,” Chang Mo Yoon, Il-Kwon Oh, Yujin Lee, Jeong-Gyu Song, Su Jeong Lee, Jae-Min Myoung, Hyun Gu Kim, Hyoung-Seok Moon, Bonggeun Shong, Han-Bo-Ram Lee, Hyungjun Kim, Chemistry of Materials., 30 (3) (2018) 830-840, https://doi.org/10.1021/acs.chemmater.7b04371..
41. “Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y2O3 with Ozone,” Hanearl Jung, Woo-Hee Kim, Bo-Eun Park, Whang Je Woo, Il-Kwon Oh, Su Jeong Lee, Yun Cheol Kim, Jae-Min Myoung, Satoko Gatineau, Christian Dussarrat, Hyungjun Kim, ACS applied materials & interfaces., 10 (2) (2018) 2143-2150, https://doi.org/10.1021/acsami.7b14260.
40. “Simultaneous improvement of the dielectric constant and leakage currents of ZrO2 dielectrics by incorporating a highly valent Ta5+ element,” Bo-Eun Park, Il-Kwon Oh, Jong Seo Park, Seunggi Seo, David Thompson, Hyungjun Kim, Journal of Materials Chemistry C., 6 (36) 9794-9801, 10.1039/c8tc03640c.
39. “Comparative study of the growth characteristics and electrical properties of atomic-layer-deposited HfO2 films obtained from metal halide and amide precursors,” Il-Kwon Oh, Bo-Eun Park, Seunggi Seo, Byung Chul Yeo, Jukka Tanskanen, Woo-Hee Kim, Hyungjun Kim, Journal of Materials Chemistry C, 6 (27) (2018) 7367-7376, 10.1039/c8tc01476k.
2017
38 “Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition,” Kangsik Kim, Il-Kwon Oh, Hyungjun Kim, Zonghoon Lee, Applied Surface Science., 425 (2017) 781-787, https://doi.org/10.1016/j.apsusc.2017.06.241.
37. “Reaction Mechanism of Area-Selective Atomic Layer Deposition for Al2O3 Nanopatterns,” Seunggi Seo, Byung Chul Yeo, Sang Soo Han, Chang Mo Yoon, Joon Young Yang, Jonggeun Yoon, Choongkeun Yoo, Ho-jin Kim, Yong-baek Lee, Su Jeong Lee, Jae-Min Myoung, Han-Bo-Ram Lee, Woo-Hee Kim, Il-Kwon Oh, Hyungjun Kim, ACS applied materials & interfaces., 9 (47) (2017) 41607-41617, https://doi.org/10.1021/acsami.7b13365.
36. “Atomic layer deposition of Y-stabilized ZrO2 for advanced DRAM capacitors,”Bo-Eun Park, Il-Kwon Oh, Chandreswar Mahata, Chang Wan Lee, David Thompson, Wan Joo Maeng, Hyungjun Kim, Journal of Alloys and Compounds., 722 (2017) 307-312, https://doi.org/10.1016/j.jallcom.2017.06.036.
35. “Catalytic chemical vapor deposition of large-area uniform two-dimensional molybdenum disulfide using sodium chloride,” Jeong-Gyu Song, Gyeong Hee Ryu, Youngjun Kim, Whang Je Woo, Kyung Yong Ko, Yongsung Kim, Changseung Lee, Il-Kwon Oh, Jusang Park, Zonghoon Lee, Hyungjun Kim, Nanotechnology., 28 (46) (2017) 465103, https://doi.org/10.1088/1361-6528/aa8f15.
34. “Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors,” Hanearl Jung, Il-Kwon Oh, Seungmin Yeo, Hyungjun Kim, Su Jeong Lee, Yun Cheol Kim, Jae-Min Myoung, Soo-Hyun Kim, Jun Hyung Lim, Sunhee Lee, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films., 35 (3) (2017) 031510, https://doi.org/10.1116/1.4982224.
33. “A composite layer of atomic-layer-deposited Al2O3 and graphene for flexible moisture barrier,” Taewook Nam, Yong Ju Park, Haksoo Lee, Il-Kwon Oh, Jong-Hyun Ahn, Sung Min Cho, Hyungjun Kim, Carbon., 116 (2017) 553-561, https://doi.org/10.1016/j.carbon.2017.02.023.
32. “Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant,” Il-Kwon Oh, Hyungjun Kim, Current Applied Physics., 17 (3) (2017), 333-338, https://doi.org/10.1016/j.cap.2016.12.021.
2016
31. “Bending stability of flexible amorphous IGZO thin film transistors with transparent IZO/Ag/IZO oxide–metal–oxide electrodes,” Yun Cheol Kim, Su Jeong Lee, Il-Kwon Oh, Seunggi Seo, Hyungjun Kim, Jae-Min Myoung*, Journal of Alloys and Compounds., 688 (2016) 1108-1114, https://doi.org/10.1016/j.jallcom.2016.07.169.
30. “Very high frequency plasma reactant for atomic layer deposition,” Il-Kwon Oh, Gilsang Yoo, Chang Mo Yoon, Tae Hyung Kim, Geun Young Yeom, Kangsik Kim, Zonghoon Lee, Hanearl Jung, Chang Wan Lee, Hyungjun Kim*, Han-Bo-Ram Lee*, Applied Surface Science., 387 (2016) 109–117.
29. “Highly flexible hybrid CMOS inverter based on Si nanomembrane and molybdenum disulfide,” Tanmoy Das, Xiang Chen, Houk Jang, Il‐Kwon Oh, Hyungjun Kim, Jong‐Hyun Ahn*, Small., 12 (2016) 5720-5727, https://doi.org/10.1002/smll.201602101.
28. “Effect of Al2O3 Deposition on Performance of Top-Gated Monolayer MoS2-Based Field Effect Transistor,” Jeong-Gyu Song, Seok Jin Kim, Whang Je Woo, Youngjun Kim, Il-Kwon Oh, Gyeong Hee Ryu, Zonghoon Lee, Jun Hyung Lim, Jusang Park*, Hyungjun Kim*, ACS Appl. Mater. Interfaces., 8 (2016) 28130–28135, https://doi.org/10.1021/acsami.6b07271.
27. “TEM Analysis of Plasma Induced Damages in Plasma Enhanced Atomic Layer Deposition,” Kangsik Kim, Il Kwon Oh, Hyungjun Kim, Zonghoon Lee, International Symposium on Microscopy and Microanalysis of Materials., (2016), https://scholarworks.unist.ac.kr/handle/201301/40217.
26. “Surface treatment process applicable to next generation graphene-based electronics,” Ki Seok Kim, Hyo-Ki Hong, Hanearl Jung, Il-Kwon Oh, Zonghoon Lee, Hyungjun Kim, Geun Young Yeom*, Kyong Nam Kim**, Carbon., 104 (2016) 119-124, https://doi.org/10.1016/j.carbon.2016.03.054.
25. “Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor,” Hanearl Jung, Woo-Hee Kim, Il-Kwon Oh, Chang-Wan Lee, Clement Lansalot-Matras, Su Jeong Lee, Jae-Min Myoung, Han-Bo-Ram Lee, Hyungjun Kim*, Journal of Materials Science., 51 (2016) 5082-5091, https://doi.org/10.1007/s10853-016-9811-0.
24. “Atomic layer deposition of HfO2 on graphene through controlled ion beam treatment,” Ki Seok Kim, Il-Kwon Oh, Hanearl Jung, Hyungjun Kim, Geun Young Yeom, Kyong Nam Kim, Applied Physics Letters., 108 (2016) 213102, https://doi.org/10.1063/1.4950997.
23. “Effects of TaN diffusion barrier on Cu-gate ZnO:N thin-film transistors,” Whang Je Woo, Taewook Nam, Hanearl Jung, Il-Kwon Oh, Jeong-Gyu Song, Wanjoo Maeng, Hyungjun Kim, IEEE Electron Device Letters., 37 (2016) 599-602, https://doi.org/10.1109/LED.2016.2549035.
22. “Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2,” Bo-Eun Park, Il-Kwon Oh, Chang Wan Lee, Gyeongho Lee, Young-Han Shin, Clement Lansalot-Matras, Wontae Noh, Hyungjun Kim*, Han-Bo-Ram Lee*, J. Phys. Chem. C., 120 (2016) 5958–5967, https://doi.org/10.1021/acs.jpcc.5b05286.
21. “Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe2 p-Channel and MoS2 n-Channel Transistors,” Atiye Pezeshki, Seyed Hossein Hosseini Shokouh, Pyo Jin Jeon, Iman Shackery, Jin Sung Kim, Il-Kwon Oh, Seong Chan Jun, Hyungjun Kim, Seongil Im*, ACS Nano 10 (2016) 1118–1125, https://doi.org/10.1021/acsnano.5b06419.
20. “Film Properties of Al Thin Films Depending on Process Parameters and Film Thickness Grown by Sputter,” Oh Il-Kwon, Yoon Chang Mo, Jang Jin Wook, Kim Hyungjun, Korean Journal of Materials Research., 26 (2016) 438-443, https://www.cheric.org/research/tech/periodicals/doi.php?art_seq=1475803.
2015
19. “Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas,” Young Bok Lee, Il-Kwon Oh, Edward Namkyu Cho, Pyung Moon, Hyungjun Kim, Ilgu Yun*, Applied Surface Science., 349 (2015) 757–762, https://doi.org/10.1016/j.apsusc.2015.05.066.
18. “Nucleation and Growth of the HfO2 Dielectric Layer for Graphene-Based Devices,” Il-Kwon Oh, Jukka Tanskanen, Hanearl Jung, Kangsik Kim, Mi Jin Lee, Zonghoon Lee, Seoung-Ki Lee, Jong-Hyun Ahn, Chang Wan Lee, Kwanpyo Kim, Hyungjun Kim*, Han-Bo-Ram Lee*, Chem. Mater., 27 (2015) 5868–5877, https://doi.org/10.1021/acs.chemmater.5b01226.
16. “Nanoscale Hydrophobic Coating by Atomic Layer Deposition Rare Earth Oxides,” Zonghoon Lee, Il-Kwon Oh, Kangsik Kim, Kyeongyong Ko, Seojung Lee, JM Myung, Clement Lansalot-matras, Wontae Noh, Hyungjoon Kim, Hanboram Lee*, MRS., (2015), https://scholarworks.unist.ac.kr/handle/201301/42188.
15. “Hydrophobicity of rare earth oxides grown by atomic layer deposition,” Il-Kwon Oh, Kangsik Kim, Zonghoon Lee, Kyung Yong Ko, Chang-Wan Lee, Su Jeong Lee, Jae Min Myung, Clement Lansalot-Matras, Wontae Noh, Christian Dussarrat, Hyungjun Kim, Han-Bo-Ram Lee*, Chem. Mater., 27 (2015) 148–156, https://doi.org/10.1021/cm503659d.
14. “The impact of atomic layer deposited SiO2 passivation for high-k Ta1-xZrxO on the InP substrate,” Chandreswar Mahata, Il-Kwon Oh, Chang Mo Yoon, Chang Wan Lee, Jungmok Seo, Hassan Algadi, Mi-Hyang Sheen, Young-Woon Kim, Hyungjun Kim, Taeyoon Lee*, Journal of Materials Chemistry C., 3 (2015) 10293-10301, https://doi.org/10.1039/C5TC01890K.
13. “In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides,” Il-Kwon Oh, Kangsik Kim, Zonghoon Lee, Jeong-Gyu Song, Chang Wan Lee, David Thompson, Woo-Hee Kim, Wan Joo Maeng*, Hyungjun Kim*, Journal of Materials Chemistry C., 3 (2015) 4852-4858, https://doi.org/10.1039/C4TC02686A.
12. “Lowering contact resistance by SWCNT–Al bilayer electrodes in solution processable metal-oxide thin film transistor,” Su Jeong Lee, Tae Il Lee, Jee Ho Park, Il-Kwon Oh, Hyungjun Kim, Jung Han Kim, Chul-Hong Kim, Gee Sung Chae, Hong Koo Baik, Jae-Min Myoung*, Journal of Materials Chemistry C., 3 (2015) 1403-1407, https://doi.org/10.1039/C4TC02431A.
2014
11. “Atomic layer deposition of CeO2/HfO2 gate dielectrics on Ge substrate,” Wan Joo Maeng, Il-Kwon Oh, Woo-Hee Kim, Min-Kyu Kim, Chang-Wan Lee, Clement Lansalot-Matras, David Thompson, Schubert Chu, Hyungjun Kim*, Applied Surface Science., 321 (2014) 214–218, https://doi.org/10.1016/j.apsusc.2014.10.025.
10. “Significant Enhancement of the Dielectric Constant through the Doping of CeO2 into HfO2 by Atomic Layer Deposition,” Woo-Hee Kim, Min-Kyu Kim, Il-Kwon Oh, Wan Joo Maeng, Taehoon Cheon, Soo-Hyun Kim, Atif Noori, David Thompson, Schubert Chu, and Hyungjun Kim, J. Am. Ceram. Soc., 97 (2014) 1164–1169, https://doi.org/10.1111/jace.12762.
9. “Atomic layer deposition of Y2O3 and yttrium-doped HfO2 using a newly synthesized Y(iPrCp)2(N-iPr-amd) precursor for a high permittivity gate dielectric,” Jae-Seung Lee, Woo-Hee Kim, Il-KwonOh, Min-Kyu Kim, Gyeongho Lee, Chang-Wan Lee, Jusang Park, Clement Lansalot-Matras, Wontae Noh, Hyungjun Kim*, Applied Surface Science., 297 (2014) 16–21, https://doi.org/10.1016/j.apsusc.2014.01.032.
8. “Review of plasma-enhanced atomic layer deposition: Technical enabler of nanoscale device fabrication,” Hyungjun Kim* and Il-Kwon Oh, Jpn. J. Appl. Phys., 53 (2014) 03DA01, https://doi.org/10.7567/JJAP.53.03DA01.
7. “Fabrication of Transferable Al2O3 Nanosheet by Atomic Layer Deposition for Graphene FET,” Hanearl Jung, Jusang Park, Il-Kwon Oh, Taejin Choi, Sanggeun Lee, Juree Hong, Taeyoon Lee, Soo-Hyun Kim, and Hyungjun Kim*, ACS Appl. Mater. Interfaces., 6 (2014) 2764-2769, https://doi.org/10.1021/am4052987.
6. “Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor,” Youngbin Lee, Jinhwan Lee, Hunyoung Bark, Il-Kwon Oh, Gyeong Hee Ryu, Zonghoon Lee, Hyungjun Kim, Jeong Ho Cho, Jong-Hyun Ahn* and Changgu Lee*, Nanoscale., 6 (2014) 2821, https://doi.org/10.1039/C3NR05993F.
5. “Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process,” Woo-Hee Kim, Il-Kwon Oh, Min-Kyu Kim, Wan Joo Maeng, Chang-Wan Lee, Gyeongho Lee, Clement Lansalot-Matras, Wontae Noh, David Thompson, David Chu and Hyungjun Kim*, Journal of Materials Chemistry C., 2 (2014) 5805-5811, https://doi.org/10.1039/C4TC00648H.
2013
4. “The effect of La2O3-incorporation in HfO2 dielectrics on Ge substrate by atomic layer deposition,” Il-kwon Oh, Min-Kyu Kim, Jae-seung Lee, Chang-Wan Lee, Clement Lansalot-Matras, Wontae Noh, Jusang Park, Atif Noori, David Thompson, Schubert Chu, W.J.Maeng, Hyungjun Kim*, Applied Surface Science., 287 (2013) 349-354, https://doi.org/10.1016/j.apsusc.2013.09.153.
1. “The Structural and Electrical Properties in CeO2 Dielectric on Ge Substrate for MOS Capacitors by Atomic Layer Deposition with Ce(iprCp)3,” Il-Kwon Oh, Min-Kyu Kim, Ju-Sang Park, Julien Gatineau, Changhee Ko, Hyungjun Kim*, The Electrochemical Society., MA2012-02 (2012) 3163, https://doi.org/10.1149/MA2012-02/43/3163.
