Logic device

  • New channel materials: Graphene, MoS2, IGZO · · ·

We study the deposition of new channel materials like IGZO, MoS2 and graphene using the ALD method. This study contributes to overcoming physical limitations in DRAM device scaling, such as high leakage current. We also study the development of devices with a stacked structure, such as 3D DRAM.



  • High-k metal gate stack

We study the deposition of high-k dielectrics using the ALD method. This technology contributes to solving device issues such as leakage current caused by scaling down. Additionally, we study the deposition of metal gate using the ALD method.



  • Silicide

This ALD method can also be applied to silicides. Silicide is a combination of metal and silicon. This silicide helps to achieve low contact resistance. Low contact resistance can be achieved using ALD, and CoSi2 thin films can be formed through Co ALD.