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SDPL Research Group

Department of Intelligence Semiconductor Engineering, Ajou University

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PUBLICATIONS

89

2025

89 "Surface conduction and reduced electrical resistivity in ultrathin noncrystalline NbP semimetal" Asir Intisar Khan , Akash Ramdas, Emily Lindgren, Hyun-Mi Kim, Byoungjun Won, Xiangjin Wu, Krishna Saraswat, Ching-Tzu Chen, Yuri Suzuki, Felipe H. da Jornada, Il-Kwon Oh* and Eric Pop* [Science]  https://www.science.org/doi/10.1126/science.adq7096

2024

88 "Optimizing De-trap Pulses in Gate-injection Type Ferroelectric NAND Cells to Minimize Read After Write Delay Issue" Giuk Kim, Hyojun Choi, Hongrae Cho, Sangho Lee, Hunbeom Shin, Hyunjun Kang, Hoon Kim, Seokjoong Shin, Seonjae Park, Sunseong Kwon, Youngjin Lim, Kang Kim, Jong Min Chung, Il-Kwon Oh, Sang-Hee Ko Park, Jinho Ahn and Sanghun Jeon [IEEE Transactions on Electron Devices] https://doi.org/10.1109/LED.2024.3482099 

87 "Effect of passivation layers in bilayer with ZrO2 on Ge substrate for improved thermal stability" Byoungjun Won, Geun-Ha Oh and Il-Kwon Oh, [Journal of Materials Science] https://doi.org/10.1007/s10853-024-10309-z 

86 "Kinetically Stabilized Hafnia Ferroelectric of Al-Doped HfO2 Film by Fast Ramping and Fast Cooling Process" Lingwei Zhang, Giuk Kim, Sangho Lee, Hunbeom Shin, Youngjin Lim, Kang Kim, Il-Kwon Oh, Sang-Hee Ko Park, Jinho Ahn and Sanghun Jeon [IEEE Transactions on Electron Devices] https://doi.org/10.1109/TED.2024.3475308 

85 "Positive interaction between charge trapping and polarization switching in metal-interlayer-ferroelectric-interlayer-silicon (MIFIS) ferroelectric field-effect transistor."Choi, H., Kim, G., Lee, S., Shin, H., Lim, Y., Kim, K., Kim, D.-H., Oh, I.-K., Park, S.-H. K., Ahn, J., & Jeon, S., IEEE Electron Device Letters, (2024), https://doi.org/10.1109/led.2024.3466211


84 "Experimental Analysis on the Interaction Between Interface Trap Charges and Polarization on the Memory Window of Metal-Ferroelectric-Insulator-Si (MFIS) FeFET." Giuk Kim, Hyojun Choi, Sangho Lee, Hunbeom Shin, Sangmok Lee, Yunseok Nam, Hyunjun Kang, Seokjoong Shin, Hoon Kim, Youngjin Lim, Kang Kim, Il-Kwon Oh, Sang-Hee Ko Park, Jinho Ahn, Sanghun Jeon, IEEE Transactions on Electron Devices ,(2024),http;//doi.org/10.1109/TED.2024.3442163 


83 "First Demonstration of Thermally Stable Zr:HfO2 Ferroelectrics via Inserting AlN Interlayer," Sangmok Lee, Giuk Kim,  Sangho Lee; Hunbeom Shin, Youngjin Lim,  Kang Kim , IEEE Electron Device Letters, vol. 45, no. 9, pp. 1578-1581(2024), https://doi.org/10.1109/LED.2024.3424973 

82 "Si precursor inhibitors for area selective deposition of Ru" Bonwook Gu, Sumaria Yasmeen, Geun-Ha Oh, Il-Kwon Oh, Youngho Kang, Han-Bo-Ram Lee*, Applied Surface Science, 669 (2024) 160530, https://doi.org/10.1016/j.apsusc.2024.160530


81 "Review of Material Properties of Oxide Semiconductor Thin Films Grown by Atomic Layer Deposition for Next-Generation 3D Dynamic Random-Access Memory Devices" Ae Rim Choi, Dong Hyun Lim, So-Yeon Shin, Hye Joo Kang, Dohee Kim, Ja-Yong Kim, Youngbae Ahn, Seung Wook Ryu, and Il-Kwon Oh*, Chem. Mater., 36 (5) (2024) 2194-2219 https://doi.org/10.1021/acs.chemmater.3c02223

80 "Role of a cyclopentadienyl ligand in a heteroleptic alkoxide precursor in atomic layer deposition" Hwi Yoon, Yujin Lee, Ga Yeon Lee, Seunggi Seo, Bo Keun Park, Taek-Mo Chung*, Il-Kwon Oh*, Hyungjun Kim*, The Journal of Chemical Physics , 160, 024302 (2024), https://doi.org/10.1063/5.0182690


2023

79 "Role of a surface hydroxyl group depending on growth temperature in atomic layer deposition of ternary oxides" Sanghun Lee, Seunggi Seo, Woo-Jae Lee, Wontae Noh, Se-Hun Kwon, Il-Kwon Oh*, Hyungjun Kim*, Journal of Vacuum Science & Technology A, 41 (2023) 062402, https://doi.org/10.1116/6.0002880

78 "Understanding Growth Mechanism of Atomic Layer Deposition of Tisiox for Spacer in Double Patterning Process" Sanghun Lee, Seunggi Seo, Wonate Noh, Il-Kwon Oh, Hyungjun Kim*, 244th ECS Meeting (2023)

77 "Area-Selective Atomic Layer Deposition for Resistive Random-Access Memory Devices," Il-Kwon Oh*, Asir Intisar Khan, Shengjun Qin, Yujin Lee, H.-S. Philip Wong, Eric Pop, and Stacey F. Bent*, ACS Appl. Mater. Interfaces 2023, 15, 36, 43087–43093. https://doi.org/10.1021/acsami.3c05822

76 "Reaction mechanism and film properties of the atomic layer deposition of ZrO2 thin films with a heteroleptic CpZr(N(CH3)2)3 precursor," Ae Rim Choi, Seunggi Seo, Seiyon Kim, Dohee Kim, Seung-Wook Ryu, Woo-Jae Lee*, Il-Kwon Oh*, Applied Surface Science, 624 (2023) 157104, https://doi.org/10.1016/j.apsusc.2023.157104


75 "Dysprosium Incorporation for Phase Stabilization of Atomic-Layer-Deposited HfO2 Thin Films," Yujin Lee, Kangsik Kim, Zonghoon Lee, Hong-Sub Lee, Han-Bo-Ram Lee, Woo-Hee Kim*, Il-Kwon Oh*, and Hyungjun Kim*, Chem. Mater., 35 (6) (2023) 2312–2320, https://doi.org/10.1021/acs.chemmater.2c02862

 

2022

74 "Unveiling the Effect of Superlattice Interfaces and Intermixing on Phase Change Memory Performance," Asir Intisar Khan, Xiangjin Wu, Christopher Perez, Byoungjun Won, Kangsik Kim, Pranav Ramesh, Heungdong Kwon, Maryann C. Tung, Zonghoon Lee, Il-Kwon Oh, Krishna Saraswat, Mehdi Asheghi, Kenneth E. Goodson, H.-S. Philip Wong, and Eric Pop*, Nano Lett., 22 (15) (2022) 6285–6291, https://doi.org/10.1021/acs.nanolett.2c01869

73 "First Demonstration of Ge2Sb2Te5-Based Superlattice Phase Change Memory with Low Reset Current Density (~3 MA/cm2) and Low Resistance Drift (~0.002 at 105°C)," Asir Intisar Khan, Christopher Perez, Xiangjin Wu, Byoungjun Won, Kangsik Kim, Heungdong Kwon, Pranav Ramesh, Kathryn M Neilson, Mehdi Asheghi, Krishna Saraswat, Zonghoon Lee, Il-Kwon Oh, H-S Philip Wong, Kenneth E Goodson,  and Eric Pop, 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), (2022), https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830348


72 "Elucidating the Reaction Mechanism of Atomic Layer Deposition of Al2O3 with a Series of Al(CH3)xCl3–x and Al(CyH2y+1)3 Precursors," Il-Kwon Oh, Tania E. Sandoval, Tzu-Ling Liu, Nathaniel E. Richey, Chi Thang Nguyen, Bonwook Gu, Han-Bo-Ram Lee, Ralf Tonner-Zech, and Stacey F. Bent*, J. Am. Chem. Soc., 144 (26) (2022) 11757-11766, https://doi.org/10.1021/jacs.2c03752..

71 "Tuning Molecular Inhibitors and Aluminum Precursors for the Area-Selective Atomic Layer Deposition of Al2O3," Josiah Yarbrough, Fabian Pieck, Daniel Grigjanis, Il-Kwon Oh, Patrick Maue, Ralf Tonner-Zech, and Stacey F. Bent*, Chem. Mater., 34 (2022) 4646–4659, https://doi.org/10.1021/acs.chemmater.2c00513. 

2021


70 “Growth mechanism and electrical properties of tungsten films deposited by plasma-enhanced atomic layer deposition with chloride and metal organic precursors,” Yujin Lee, Seunggi Seo, Taewook Nam, Hyunho Lee, Hwi Yoon, Sangkyu Sun, Il-Kwon Oh, Sanghun Lee, Bonggeun Shong, Jin Hyung Seo, Jang Hyeon Seok, and Hyungjun Kim, Applied Surface Science, 568 (2021) 150939, https://doi.org/10.1016/j.apsusc.2021.150939.


69 “Atomic Layer Deposition of Titanium Silicate for Multi-Patterning Process,” Sanghun Lee, Seunggi Seo, Wontae Noh, Il-Kwon Oh, Hyungjun Kim, 2021 IEEE International Interconnect Technology Conference (IITC), (2021) 1-3, 10.1109/IITC51362.2021.9537517.


68 “Role of Precursor Choice on Area-Selective Atomic Layer Deposition,” Il-Kwon Oh, Tania E Sandoval, Tzu-Ling Liu, Nathaniel E Richey, Stacey F Bent, Chem. Mater., 33 (11) (2021) 3926-3935, https://doi.org/10.1021/acs.chemmater.0c04718.


67 “Self-Formation of Superhydrophobic Surfaces through Interfacial Energy Engineering between Liquids and Particles,” Sumaira Yasmeen, Jaehong Yoon, Chan Hui Moon, Rizwan Khan, Houda Gaiji, Sangwoo Shin, Il-Kwon Oh, Han-Bo-Ram Lee, Langmuir, 37 (17) (2021) 5356-5363, https://doi.org/10.1021/acs.langmuir.1c00481.


66 “Hydrogen Barriers Based on Chemical Trapping Using Chemically Modulated Al2O3 Grown by Atomic Layer Deposition for InGaZnO Thin-Film Transistors,” Yujin Lee, Taewook Nam, Seunggi Seo, Hwi Yoon, Il-Kwon Oh, Chong Hwon Lee, Hyukjoon Yoo, Hyun Jae Kim, Wonjun Choi, Seongil Im, Joon Young Yang, Dong Wook Choi, Choongkeun Yoo, Ho-jin Kim, Hyungjun Kim, ACS Applied Materials & Interfaces, 13 (17) (2021) 20349-20360, https://doi.org/10.1021/acsami.1c02597


65 “MoS2 doping by atomic layer deposition of high-k dielectrics using alcohol as process oxidants,” Whang Je Woo, Seunggi Seo, Taewook Nam, Youngjun Kim, Donghyun Kim, Jeong-Gyu Song, Il-Kwon Oh, Jun Hyung Lim, Hyung-Jun Kim, Hyungjun Kim, Applied Surface Science., 541 (2021) 148504, https://doi.org/10.1016/j.apsusc.2020.148504..

64 “Area-Selective Molecular Layer Deposition of a Silicon Oxycarbide Low-k Dielectric,” Xiaoyun Yu, Dara Bobb-Semple, Il-Kwon Oh, Tzu-Ling Liu, Richard G Closser, William Trevillyan, and Stacey F Bent, Chem. Mater., 33 (3) (2021) 902-909, https://doi.org/10.1021/acs.chemmater.0c03668.


63 “Reaction Mechanisms of Non-hydrolytic Atomic Layer Deposition of Al2O3 with a Series of Alcohol Oxidants,” Seunggi Seo, Whang Je Woo, Yujin Lee, Hwi Yoon, Miso Kim, Il-Kwon Oh, Seung-Min Chung, Hyungjun Kim, and Bonggeun Shong, Journal of Physical Chemistry, 125 (33) (2021) 18151-18160, https://doi.org/10.1021/acs.jpcc.1c03518.


62 “Hydrogen Barriers Based on Chemical Trapping Using Chemically Modulated Al2O3 Grown by Atomic Layer Deposition for InGaZnO Thin-Film Transistors,” Yujin Lee, Taewook Nam, Seunggi Seo, Hwi Yoon, Il-Kwon Oh, Chong Hwon Lee, Hyukjoon Yoo, Hyun Jae Kim, Wonjun Choi, Seongil Im, Joon Young Yang, Dong Wook Choi, Choongkeun Yoo, Ho-jin Kim, and Hyungjun Kim, ACS Appl. Mater. Interface, 13 (17) (2021) 20349–20360, https://doi.org/10.1021/acsami.1c02597.


61 “Controllable size and crystallinity of Ru nanoparticles on a carbon support synthesized by fluidized bed reactor-atomic layer deposition for enhanced hydrogen oxidation activity,” Woo-Jae Lee, Susanta Bera, Hyun-Jae Woo, Jung-Won An, Jong-Seong Bae, Il-Kwon Oh, and Se-Hun Kwon, Journal of Materials Chemistry A, 9 (32) (2021) 17223-17230, 10.1039/D1TA03678E.